j.ziis.1) <^>.mi-l.onailctot l/-* 10 ducts., [inc. / j 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 irfz44/45 IRFZ40/42 n-channel power mosfets features lower rds (on) improved inductive ruggedness fast switching times rugged polysilicon gate cell structure lower input capacitance extended safe operating area improved high temperature reliability to-220 irfz44/irfz45 IRFZ40/irfz42 product summary part number irfz44 irfz45 IRFZ40 irfz42 vds 60v 60v 50v ros(on) 0.028(1 0.035(1 00280 50v ; 0035(1 id 35a 35a 35a 35a current limited by wire 8 pin diameter maximum ratings characteristic drain-source voltage (1) drain-gate voltage (rcs=1 om(1)(1) gate-source voltage continuous drain current tc = 25c continuous drain current tc=100c drain current? pulsed (3) gate current? pulsed single pulsed avalanche energy (4) avalanche current total power dissipation at tc=25c derate above 25c operating and storage junction temperature range maximum lead temp, for soldering purposes. 1/8" from case for 5 seconds symbol vdss vdgr vgs id id idm igm eas ias po tj. tstg tl irfz44 irfz45 60 60 35 35 35 33 210 190 1 5 3 1 1 -55 t 3c IRFZ40 5 5 20 35 35 210 5 3 5 >0 2 0 175 0 irfz42 0 0 35 33 190 unit vdc vdc vdc adc adc adc adc mj a watts w/c c c notes: (1) tj=25c to 175c (2) pulse test. pulse width<300^s, duty cycle<2% (3) repetitive rating: pulse with limited by max junction temperature (4) l=50mh, vdd=25v. rg=25(1, starting tj=25c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placina orders. quality semi-conductors
irfz44/45 IRFZ40/42 n-channel power mosfets electrical characteristics (tc = 25c unless otherwise specified) symbol bvoss vgsithi loss loss loss idiot) ros(on| qis c,ss com crss tfl(on| t, td(oll) tl qfl qgs q9IRFZ40/42 gate threshold voltage gate-source leakage forward gate-source leakage reverse zero gate voltage drain current on-state drain-source current (2) static drain-source irfz44/40 on-state resistance irfz45/42 forward transconductance (2) input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge (gate-source pulse gate-drain) gate-source charge gate-drain ("miller") charge min 60 50 2.0 ? ? 35 15 - ? - - - ? ? - ? - typ - - ? ? ? ? - 2450 740 360 ? - ? - - ? - max - 4.0 100 -100 250 1000 - 0.028 0.035 - - ? - 32 210 75 130 100 21 58 units v v na na k* ma a 0 u pf pf pf ns ns ns ns nc nc nc test conditions vos=ov, b = 250ma vos=vgs, lo=250^a vqs=20v vgs=-20v vds=max. rating vos=ov vos=0 8max. rating, vgs=ov. tc=150c vds^1 2v vqs=10v vgs=10v, id=33a vos^sov, id-33a vos=ov vds=25v f= 1.0mhz (mosfet switching times are essentially independent of operating temperature) vgs=10v, b = 52a, vos = 0.8max rating (gate charge is essentially independent of operating temperature ) thermal resistance rthjc rthcs riuja junction-to-case case-to-smk junction-to-ambient max typ 1.0 0 5 max 80 k/w k.'w k/w mounting surface flat smooth, and greased free air operation notes: (1) tj = 25c to 175c (2) pulse test pulse width<300ns. duty cycle<2% (3) repetitive rating pulse width limited by max junction temperature
irfz44/45 IRFZ40/42 ..-channel power mosfets source-drain diode ratings and characteristics symbol is ism vsd trr characteristic continuous source irfz44/40 current (body diode) irfz45/42 win ? pulse-source current irfz44/40 ? (3) irfz45/42 | diode forward voltage all reverse recovery time ? typ _ ? - max 3fa 35 210 190 2 5 250 units a a a a v ns test conditions modified mosfet integral reverse p-n junction rectifier ?4 tc=25c, is=35a, vgs=ov t, = 25c. if = 35a, dlf/dt=100a/^s notes: (1) tj=25c to 175c (2) pulse test pulse widthoooys, duty cycle<2% (3) repetitive rating pulse with limited by max junction temperature 6 12 18 24 30 36 vds. drain-to source voltage (volts) typical output characteristics 10 12 14 vos, qate-to-source voltage (volts) typical transfer characteristics 05 1 b ""15 20 25 vds. drain-to-source voltage (volts) typical saturation characteristics g- i | 10' i 5 irfz4 4/40 -p? r- _^ * ksss? -r^-* -j irf,? r z4 t= 45 1 4/40 ^h: 12 s ' operatfon hn this aflea 0 "dsfon [ j^_ ^s" 11 \1 1 ^ -> .-.. - \ ; 1 i^ | :i|| 1ms |l ? dc - - 0 5 10 5 10' 5 10' s, drain-to-source voltage (volts) maximum safe operating area
|
